Introduction to Focused Ion Beams: Instrumentation, Theory, Techniques and PracticeLucille A. Giannuzzi, North Carolina State University Springer Science & Business Media, 18 maj 2006 - 357 Introduction to Focused Ion Beams is geared towards techniques and applications. This is the only text that discusses and presents the theory directly related to applications and the only one that discusses the vast applications and techniques used in FIBs and dual platform instruments. |
Spis treści
| 1 | |
ION SOLID INTERACTIONS | 13 |
FOCUSED ION BEAM GASES FOR DEPOSITION AND ENHANCED ETCH | 53 |
THREEDIMENSIONAL NANOFABRICATION USING FOCUSED ION BEAMS | 73 |
DEVICE EDITS AND MODIFICATIONS | 87 |
THE USES OF DUAL BEAM FIB IN MICROELECTRONIC FAILURE ANALYSIS | 107 |
HIGH RESOLUTION LIVE IMAGING OF FIB MILLING PROCESSES FOR OPTIMUM ACCURACY | 133 |
FIB FOR MATERIALS SCIENCE APPLICATIONS A REVIEW | 143 |
FOCUSED ION BEAM SECONDARY ION MASS SPECTROMETRY FIBSIMS | 269 |
QUANTITATIVE THREEDIMENSIONAL ANALYSIS USING FOCUSED ION BEAM MICROSCOPY | 281 |
APPLICATION OF FIB IN COMBINATION WITH AUGER ELECTRON SPECTROSCOPY | 301 |
Ga Ion Sputter Yields | 328 |
Backsputtered Ga Ion Fraction | 331 |
30 keV Ga Ion Range at 0 degrees | 336 |
30 keV Ga Ion Range at 88 degrees | 339 |
5 keV Ga Ion Range at 0 degrees | 345 |
PRACTICAL ASPECTS OF FIB TEM SPECIMEN PREPARATION | 173 |
FIB LIFTOUT SPECIMEN PREPARATION TECHNIQUES | 201 |
A FIB MICROSAMPLING TECHNIQUE AND A SITE SPECIFIC TEM SPECIMEN PREPARATION METHOD | 229 |
DUALBEAM FIBSEM SYSTEMS | 246 |
5 keV Ga Ion Range at 88 degrees | 348 |
Notes | 351 |
| 352 | |
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Kluczowe wyrazy i wyrażenia
addition allows analysis angle applications artifacts atoms Auger beam current channeling chapter charge chemical chip column combination contrast cross section cross-section damage defect depending deposition depth developed device discussed dual beam effect electron beam elemental energy enhanced et al etch example Failure FIB milling field Figure focused ion beam function Giannuzzi grain grid implantation important incident increase interactions interest International layer limit mass material mechanical metal method micro-sample Microscopy mounted Note observed obtained operation particles performed Physics polishing position possible precursor primary probe produce range reconstruction redeposition reference region relative removal resolution result sample scanning secondary electron secondary ion semiconductor shows SIMS single slice specific specimen preparation sputtering sputtering yield structure substrate surface technique thickness thin tilt tool trench typically voltage volume yield